A lack of planarity along the interface between the solder and the ceramic raft in an IGBT module is a common anomaly that can make heat dissipation uneven across the die and cause the die to crack.
NUREMBERG, Germany--(BUSINESS WIRE)--PCIM 2023 – Power Integrations (NASDAQ: POWI), the leader in gate-driver technology for medium- and high-voltage inverter applications, today introduced the ...
New IXIDM1401 driver module combines supreme compactness with the highest performance and reliability. IXYS’ objective is to serve the market with IGBT driver parts that enable a short design circle ...
TOKYO, JAPAN. Saki Corp. has announced the introduction of its 3D-CT automated X-ray inspection (AXI) system designed specifically for the inspection and measurement of insulated gate bipolar ...
The 1200V / 300A Half-Bridge IGBT is rated for 450A continuous DC current (Tj=90°C) based on Trench Gate Field Stop (TG-FS) technology. And it is housed in the CPAK-EDC package with a copper baseplate ...
At the PCIM 2008 Exhibition and Congress in Nuremberg, Infineon Technologies has introduced its new MIPAQ family of IGBT (Insulated Gate Bipolar Transistor) modules. According to the company, the ...
According to independent consulting and research organization IDTechEX, any vehicle manufacturer without a compelling line up of electric vehicles by 2025 is signing its “death warrant.” It’s not ...
LINCOLN, England, Oct. 31, 2018 /CNW/ - Dynex Power Inc. (TSXV: DNX), a leading manufacturer of high power semiconductors and electronic equipment, is pleased to announce the launch of ...
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